IIT Researchers Claim Breakthrough in Memory Device Technology

Researchers at IIT Roorkee Tuesday claimed to have made a breakthrough in memory device technology which, they said, usher in a new technological revolution. A team of researchers from the Department of Physics and Centre for Nanotechnology has developed a high-density, energy-efficient and four-logic state memory device named Magnetoelectric Random Access Memory (MeRAM). The device could provide a massive boost to the overall computing processes and memory-intensive tasks like video and multimedia signal processing, pattern recognition, virtual reality, artificial intelligence and machine learning. “MeRAM has immense potential to be used…

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